PECVD process

ABSTRACT

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

CROSS-REFERENCE TO RELATED APPLICATIONS

This Application is a Continuation of application Ser. No. 15/802,496filed on Nov. 3, 2017, which is a Continuation of Ser. No. 15/278,455filed on Sep. 28, 2016, which is a Continuation of application Ser. No.14/869,371 filed on Sep. 29, 2015, which is a Continuation of U.S.patent application Ser. No. 14/056,203, filed on Oct. 17, 2013, whichclaims benefit of U.S. Provisional Patent Application Ser. No.61/761,515, filed Feb. 6, 2013, U.S. Provisional Patent Application Ser.No. 61/738,247, filed Dec. 17, 2012, and U.S. Provisional PatentApplication Ser. No. 61/719,319, filed Oct. 26, 2012, each of which isincorporated herein by reference.

FIELD

Embodiments described herein relate to processes and apparatus forperforming plasma deposition on a substrate. More specifically,embodiments described herein relate to plasma deposition processes andapparatus for forming layers having extreme uniformity of compositionand thickness.

BACKGROUND

The semiconductor industry has grown according to Moore's Law for thelast fifty years. Moore's Law roughly holds that the number oftransistors on an integrated circuit doubles about every two years.Inherent in this formulation of is the limitation that the progressionof transistor density is two-dimensional, and that at some point physicsimposes a limit on how small devices can be.

Recently, manufacturers have developed processes that extend devicestructures into the third dimension to increase processing capability.Such devices generally feature large numbers of material layersdeposited sequentially on a substrate. In some cases, over 100 layersmay be formed. When so many layers are formed sequentially,non-uniformities in each layer can multiply, resulting in unusablestructures. Current layer formation processes and apparatus typicallyproduce non-uniformities that are not suitable for three-dimensionalstructures. Thus, new processes and apparatus are needed for formingextremely uniform layers on a substrate.

SUMMARY

Embodiments described herein provide an apparatus for processing asubstrate, comprising a chamber comprising a side wall and a floor; alid coupled to the side wall of the chamber, the side wall, floor, andlid defining an internal volume of the chamber, the lid comprising a gasdistributor having a plurality of gas flow openings formed therethrough;and a metrology device to direct light through one of the gas flowopenings and record light reflected through the gas flow opening; anelectrode between the gas distributor and the side wall, the electrodecoupled to a first tuning circuit; and a substrate support disposed inthe internal volume of the chamber.

Also described is an apparatus for processing a substrate, comprising achamber comprising a side wall and a floor; a lid coupled to the sidewall of the chamber, the side wall, floor, and lid defining an internalvolume of the chamber, the lid comprising a gas distributor having aplurality of gas flow openings formed therethrough; and a metrologydevice comprising a fiber optic to direct light through one of the gasflow openings and receive light reflected through the gas flow opening;an electrode between the gas distributor and the side wall, theelectrode coupled to a first tuning circuit; and a substrate supportdisposed in the internal volume of the chamber, the substrate supporthaving a plurality of thermal zones.

Also described is a plasma processing system, comprising: a firstchamber comprising a side wall and a floor; a lid coupled to the sidewall of the first chamber, the side wall, floor, and lid defining aninternal volume of the first chamber, the lid of the first chambercomprising a gas distributor having a plurality of gas flow openingsformed therethrough; a gas distributor heater disposed around aperiphery of the gas distributor; and a metrology device to direct lightthrough one of the gas flow openings and record light reflected throughthe gas flow opening; an electrode between the gas distributor of thefirst chamber and the side wall of the first chamber, the electrodecoupled to a first tuning circuit; and a substrate support disposed inthe internal volume of the first chamber; and a second chamber coupledto the first chamber, the second chamber comprising a side wall and afloor; a lid coupled to the side wall of the second chamber, the sidewall, floor, and lid defining an internal volume of the second chamber,the lid of the second chamber comprising a gas distributor having aplurality of gas flow openings formed therethrough; a gas distributorheater disposed around a periphery of the gas distributor; and ametrology device to direct light through one of the gas flow openingsand record light reflected through the gas flow opening; an electrodebetween the gas distributor of the second chamber and the side wall ofthe second chamber, the electrode coupled to a second tuning circuit;and a substrate support disposed in the internal volume of the secondchamber; and a common vacuum line coupled to the first chamber and thesecond chamber.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flow diagram summarizing a method according to oneembodiment.

FIG. 2 is a flow diagram summarizing a method according to anotherembodiment.

FIG. 3 is a schematic cross-sectional view of an apparatus according toone embodiment.

FIG. 4 is a schematic cross-sectional view of an apparatus according toanother embodiment.

FIG. 5A is a schematic cross-sectional view of an apparatus according toanother embodiment.

FIG. 5B is a schematic cross-sectional view of an apparatus according toanother embodiment.

FIG. 6 is a schematic cross-sectional view of an apparatus according toanother embodiment.

FIG. 7 is a schematic top view of an apparatus according to anotherembodiment.

FIG. 8A is a schematic section view of a substrate support with amulti-zone heater that may be used with the other apparatus and methodsdisclosed herein.

FIG. 8B is a schematic section view of a substrate support havingadditional features.

FIG. 8C is a schematic cross-sectional view of a chamber having themulti-zone substrate support of FIG. 8B disposed therein.

FIG. 9A is a schematic cross-sectional illustration of a chamber lidassembly with an optical metrology device according to one embodiment.

FIG. 9B is a more detailed view of the optical metrology device of FIG.9A.

FIG. 10A is a schematic isometric illustrations of a lid assembly with acollimator according to one embodiment.

FIG. 10B is a cross-sectional view of a collimator according to oneembodiment.

FIG. 10C is a schematic isometric illustrations of a lid assembly with acollimator according to another embodiment.

FIG. 11 is a bottom view of a conductive gas distributor using in-situmetrology according to one embodiment.

FIG. 12 is a flow diagram summarizing a method of determining layerthickness according to one embodiment.

FIG. 13 is a flow diagram summarizing a method of determining layerthickness according to another embodiment.

FIG. 14 illustrates an example representation of experimentalreflectivity data.

FIG. 15 illustrates an example representation of reflectivity as storedin a computer memory.

FIG. 16 illustrates example representations of wavelength-dependentconstants.

FIG. 17 illustrates example representations of wavelength-dependentvariables.

DETAILED DESCRIPTION

Extremely uniform, high quality, device layers may be formed on asubstrate in a plasma process by controlling uniformity of gas flow,uniformity of temperature among surfaces of the processing chamber,temperature profile of the substrate, and plasma density profile atvarious locations of the substrate surface. Plasma density profile andtemperature profile can be adjusted together to achieve a desireddeposition rate profile across a substrate surface. Temperatureuniformity of chamber surfaces can be adjusted to provide uniformconcentration of reactive species and to control and/or minimizedeposition on chamber surfaces.

A method 100 of forming a layer of uniform thickness and composition ona substrate is summarized in the flow diagram of FIG. 1. At 102, asubstrate is disposed on a substrate support in a CVD chamber.

At 104, a temperature profile is established within the substrate. Thismay be done by heating different parts of the substrates at differentrates, for example using a zoned heater. A two-zone heater may be usedand a temperature offset between the zones may be from about −50° C. toabout +50° C. The substrate temperature may be from about 300° C. toabout 800° C., such as between about 400° C. and about 650° C.,depending on the material being deposited.

At 106, a face plate temperature is selected and controlled. The faceplate is the surface of the chamber lid that is exposed to theprocessing environment and faces the substrate support. Controlling theface plate temperature promotes temperature uniformity in the processingregion of the chamber near the face plate, improving compositionaluniformity of the reaction gas mixture as it exits the face plate intothe processing region. Face plate temperature may be controlled bythermally coupling a heating element to the face plate. This may be doneby direct contact between the heating element and the face plate, or maybe by conduction through another member. The face plate temperature maybe between about 100° C. and about 300° C.

At 108, a precursor gas mixture is provided to the chamber through thetemperature controlled face plate. The gas mixture may be any suitableCVD precursor mixture, such as a silicon (polysilicon or amorphoussilicon), silicon oxide, silicon nitride, or silicon oxynitrideprecursor mixture. Dopant precursors such as boron compounds, phosphoruscompounds, and/or arsenic compounds may be included. The following flowrate ranges apply for a chamber sized for 300 mm substrates. Appropriatescaling may be used for chambers sized for other substrates. A siliconprecursor such as silane may be provided at a flow rate between about 20sccm and about 2,000 sccm. TEOS may be provided at a flow rate betweenabout 20 mgm and about 5,000 mgm. An oxygen precursor such as N₂O, O₂,O₃, H₂O, CO, or CO₂ may be provided at a flow rate between about 1,000sccm and about 20,000 sccm. A nitrogen precursor such as N₂, N₂O, NH₃,or H₂N₂, or a substituted variant thereof, or any mixture of theforegoing nitrogen species, may be provided at a flow rate between about200 sccm and about 50,000 sccm. A carbon precursor such as ahydrocarbon, for example methane, may be included to add carbon to thelayer. Dopants precursors such as trimethylborane (TMB), diborane(B₂H₆), phosphine (PH₃), arsine (AsH₃), and substituted phosphines andarsines, or mixtures thereof, may be provided at flow rates betweenabout 20 sccm and about 3,000 sccm. The dopant precursors may be carriedby a carrier gas, or diluted in a dilution gas, for example helium,argon, nitrogen, or hydrogen, or any mixture thereof, flowing at a rateof between about 500 sccm and about 30,000 sccm. Operating pressurebetween about 0.5 Torr and about 10 Torr is established in the chamber.Spacing between the face plate and the substrate is established betweenabout 200 mils (thousandths of an inch) and 1,100 mils.

At 110, a plasma is formed in the chamber from the precursor gasmixture. The plasma may be formed by capacitive or inductive means, andmay be energized by coupling RF power into the precursor gas mixture.The RF power may be a dual-frequency RF power that has a high frequencycomponent and a low frequency component. The RF power is typicallyapplied at a power level between about 50 W and about 1,500 W, which maybe all high-frequency RF power, for example at a frequency of about13.56 MHz, or may be a mixture of high-frequency power and low frequencypower, for example at a frequency of about 300 kHz.

At 112, the plasma density profile is adjusted by biasing an electrodecoupled to a side wall of the chamber and/or an electrode coupled to thesubstrate support. Each electrode will typically be controlled toprovide impedance for a selected current to flow through the electrode.A resonant tuning circuit is typically coupled to each electrode and toground, and components for the resonant tuning circuit are selected,with at least one variable component, so the impedance can be adjusteddynamically to maintain the target current flow. The current flowthrough each electrode may be controlled to a value between about 0 Aand about 30 A or between about 1 A and about 30 A.

At 114, a layer is formed on the substrate from the plasma. Depending onthe composition of the precursor, the layer may be a silicon layer, forexample a polysilicon, microcrystalline silicon, or amorphous siliconlayer, which may be doped, a silicon oxide layer, which may be doped, asilicon oxynitride layer, which may be doped, a silicon carbide layer,which may be doped, a silicon oxycarbide layer, which may be doped, asilicon nitrocarbide layer, which may be doped, a silicon nitroxycarbidelayer, which may be doped, or a silicon nitride layer, which may bedoped. Other layers, for example layers not containing silicon, may alsobe deposited by selecting appropriate precursors and flow rates.

The layer formed typically has thickness uniformity of 2% or better. Inone aspect, the thickness of the deposited layer may vary from anaverage value by no more than 2%. In another aspect, a standarddeviation of the layer thickness is no more than about 2%. Thisthickness uniformity enables formation of multiple layers, for exampleup to 150 layers, in a single sequential process in a single chamber,while maintaining a stack structure that is substantially planar,laminar, and parallel.

Uniformity may be further enhanced by controlling temperature of chambersurfaces exposed to the plasma. When chamber surfaces are allowed tofloat thermally, hot and cold spots can develop that affect plasmadensity and reactivity in uncontrolled ways. As described above, theface plate of the showerhead may be heated using a resistive heater orthermal fluid disposed in a conduit through a portion of the face plateor otherwise in direct contact or thermal contact with the face plate.The conduit may be disposed through an edge portion of the face plate toavoid disturbing the gas flow function of the face plate. Heating theedge portion of the face plate may be useful to reduce the tendency ofthe face plate edge portion to be a heat sink within the chamber.

The chamber walls may also be heated to similar effect. Heating thechamber surfaces exposed to the plasma also minimizes deposition,condensation, and/or reverse sublimation on the chamber surfaces,reducing the cleaning frequency of the chamber and increasing meancycles per clean. Higher temperature surfaces also promote densedeposition that is less likely to produce particles that fall onto asubstrate. Thermal control conduits with resistive heaters and/orthermal fluids may be disposed through the chamber walls to achievethermal control of the chamber walls. Temperature of all surfaces may becontrolled by a controller.

A method 200 of forming a layer of uniform thickness and composition ona substrate is summarized in the flow diagram of FIG. 2. The method 200is similar in many respects to the method 100 of FIG. 1, with theaddition of metrology components. At 202, a substrate is disposed on asubstrate support in a CVD chamber.

At 204, a baseline reflectivity of the substrate is detected by shininga light on the substrate in the chamber and measuring a spectrum oflight reflected by the substrate. An exemplary apparatus for measuringreflectivity of the substrate in situ is described below. Intensity ofthe light directed to the substrate as a function of wavelength isobtained from spectral analysis of the incident light. Intensity of thelight reflected from the substrate as a function of wavelength isobtained from spectral analysis of the reflected light. A ratio of thereflected light intensity to the incident light intensity as a functionof wavelength is computed and saved for subsequent processing. Anelectronic computation device having an electronic memory may be usedfor analysis of spectral data.

At 206, a temperature profile is established in the substrate,substantially as described above at 104. At 208, a temperature of theface plate is set, as at 106 above. Flow of precursors is establishedinto the CVD chamber at 210, as at 108 above. A plasma is formed in theCVD chamber at 212, as at 110 above. Density profile of the plasma isadjusted and selected at 214, as at 112 above. At 216, a layer isdeposited from the plasma onto the substrate, substantially as describedabove at 114.

At 218, a thickness uniformity of the deposited layer is detected whilethe layer is being deposited to enable adjustments to control thethickness uniformity. Light reflected from the substrate is monitored asthe deposition proceeds, and changes in the reflected light are used todetermine thickness. Multiple locations on the substrate are typicallymonitored to determine changes in thickness at the various locations.The thickness data for the various locations is compared to determinethickness uniformity as the deposition proceeds. Apparatus andalgorithms for determining thickness from reflected light is describedin more detail below.

At 220, chamber parameters that affect distribution of deposition acrossthe substrate are adjusted based on the thickness uniformity determinedat 218 from analysis of the reflected light. At least one of plasmadensity profile, substrate temperature profile, and gas flow rate areadjusted to control thickness uniformity as deposition of the layerproceeds. Apparatus for adjusting substrate temperature profile andplasma density profile are described in more detail below. Substratetemperature profile is adjusted by changing local energy flux atdifferent locations on the substrate, typically using a substratesupport with zoned energy flux. Plasma density profile may be adjustedby applying electrodes around the plasma generation area of the chamber,above the substrate support, and using variable electronic components toadjust impedance of the electrodes independently to change the impedanceof various paths to ground for charge carriers in the plasma.Controlling the impedance geometrically directly controls the geometryof plasma density above the substrate support. In this way, more plasmamay be attracted toward an edge region of the substrate or pushed towarda central region of the substrate, depending on the desired adjustment.

At 222, reflected light is analyzed to determine a deposition end pointbased on comparing the overall thickness of the deposited film to atarget thickness.

The methods 100 and 200 may be used to form a stack of layers havingdifferent composition with repeatable thickness and extreme thicknessuniformity. In one embodiment, alternating layers of silicon oxide andsilicon nitride may be formed on a silicon substrate in a single processchamber, each layer having a thickness between about 300 Å and about3,000 Å, and each layer having thickness uniformity, expressed asstandard deviation of thickness across the substrate, that is less thanabout 3%, in some cases as low as 1%. Any number of such layers, forexample more than 40 layers, in some cases as many as 125 layers, may beformed sequentially in a single process chamber.

FIG. 3 is a schematic side view of an inventive apparatus 300 that maybe used to practice processes described herein. The processing chamber300 features a chamber body 302, a substrate support 304 disposed insidethe chamber body 302, and a lid assembly 306 coupled to the chamber body302 and enclosing the substrate support 304 in a processing volume 320.Substrates are provided to the processing volume 320 through an opening326, which may be conventionally sealed for processing using a door.

An electrode 308 may be disposed adjacent to the chamber body 302 andseparating the chamber body 302 from other components of the lidassembly 306. The electrode 308 may be part of the lid assembly 306, ormay be a separate side wall electrode. The electrode 308 may be anannular, or ring-like member, and may be a ring electrode. The electrode308 may be a continuous loop around a circumference of the processingchamber 300 surrounding the processing volume 320, or may bediscontinuous at selected locations if desired. The electrode 308 mayalso be a perforated electrode, such as a perforated ring or a meshelectrode. The electrode 308 may also be a plate electrode, for examplea secondary gas distributor.

An isolator 310, which may be a dielectric material such as a ceramic ormetal oxide, for example aluminum oxide and/or aluminum nitride,contacts the electrode 308 and separates the electrode 308 electricallyand thermally from a gas distributor 312 and from the chamber body 302.The gas distributor 312 features openings 318 for admitting process gasinto the processing volume 320. The gas distributor 312 may be coupledto a source of electric power 342, such as an RF generator. DC power,pulsed DC power, and pulsed RF power may also be used.

The gas distributor 312 may be a conductive gas distributor or anon-conductive gas distributor. The gas distributor 312 may also be madeof conductive and non-conductive components. For example, a body of thegas distributor 312 may be conductive while a face plate of the gasdistributor 312 is non-conductive. In a plasma processing chamber, thegas distributor 312 may be powered, as shown in FIG. 3, or the gasdistributor 312 may be coupled to ground.

The electrode 308 may be coupled to a tuning circuit 328 that controls aground pathway of the processing chamber 300. The tuning circuit 328comprises an electronic sensor 330 and an electronic controller 334,which may be a variable capacitor. The tuning circuit 328 may be an LLCcircuit comprising one or more inductors 332. The tuning circuit 328 maybe any circuit that features a variable or controllable impedance underthe plasma conditions present in the processing volume 320 duringprocessing. In the embodiment of FIG. 3, the tuning circuit 328 featuresa first inductor 332A in series with the electronic controller 334 and asecond inductor 332B in parallel with the electronic controller 334. Theelectronic sensor 330 may be a voltage or current sensor, and may becoupled to the electronic controller 334 to afford a degree ofclosed-loop control of plasma conditions inside the processing volume320.

A second electrode 322 may be coupled to the substrate support 304. Thesecond electrode 322 may be embedded within the substrate support 304 orcoupled to a surface of the substrate support 304. The second electrode322 may be a plate, a perforated plate, a mesh, a wire screen, or anyother distributed arrangement. The second electrode 322 may be a tuningelectrode, and may be coupled to a second tuning circuit 136 by aconduit 346, for example a cable having a selected resistance such as50Ω, disposed in a shaft 344 of the substrate support 304. The secondtuning circuit 336 may have a second electronic sensor 338 and a secondelectronic controller 340, which may be a second variable capacitor. Thesecond electronic sensor 338 may be a voltage or current sensor, and maybe coupled to the second electronic controller 340 to provide furthercontrol over plasma conditions in the processing volume 320.

A third electrode 324, which may be a bias electrode and/or anelectrostatic chucking electrode, may be coupled to the substratesupport 304. The third electrode may be coupled to a second source ofelectric power 350 through a filter 348, which may be an impedancematching circuit. The second source of electric power 350 may be DCpower, pulsed DC power, RF power, pulsed RF power, or a combinationthereof.

The lid assembly 306 and substrate support 304 of FIG. 3 may be usedwith any processing chamber for plasma or thermal processing. Oneexample of a plasma processing chamber with which the lid assembly 306and substrate support 304 may be beneficially used is the PRODUCER®platform and chambers available from Applied Materials, Inc., located inSanta Clara, Calif. Chambers from other manufacturers may also be usedwith the components described above.

In operation, the processing chamber 300 affords real-time control ofplasma conditions in the processing volume 320. A substrate is disposedon the substrate support 304, and process gases are flowed through thelid assembly 306 using an inlet 314 according to any desired flow plan.Gases exit the chamber 300 through an outlet 352 Electric power iscoupled to the gas distributor 312 to establish a plasma in theprocessing volume 320. The substrate may be subjected to an electricalbias using the third electrode 324, if desired.

Upon energizing a plasma in the processing volume 320, a potentialdifference is established between the plasma and the first electrode308. A potential difference is also established between the plasma andthe second electrode 322. The electronic controllers 334 and 340 maythen be used to adjust the flow properties of the ground pathsrepresented by the two tuning circuits 328 and 336. A set point may bedelivered to the first tuning circuit 328 and the second tuning circuit336 to provide independent control of deposition rate and of plasmadensity uniformity from center to edge. In embodiments where theelectronic controllers are both variable capacitors, the electronicsensors may adjust the variable capacitors to maximize deposition rateand minimize thickness non-uniformity independently.

Each of the tuning circuits 328 and 336 has a variable impedance thatmay be adjusted using the respective electronic controllers 334 and 340.Where the electronic controllers 334 and 340 are variable capacitors,the capacitance range of each of the variable capacitors, and theinductances of the inductors 332A and 332B, are chosen to provide animpedance range, depending on the frequency and voltage characteristicsof the plasma, that has a minimum in the capacitance range of eachvariable capacitor. Thus, when the capacitance of the electroniccontroller 334 is at a minimum or maximum, impedance of the circuit 328is high, resulting in a plasma shape that has a minimum areal coverageover the substrate support. When the capacitance of the electroniccontroller 334 approaches a value that minimizes the impedance of thecircuit 328, the areal coverage of the plasma grows to a maximum,effectively covering the entire working area of the substrate support304. As the capacitance of the electronic controller 334 deviates fromthe minimum impedance setting, the plasma shape shrinks from the chamberwalls and areal coverage of the substrate support declines. Theelectronic controller 340 has a similar effect, increasing anddecreasing areal coverage of the plasma over the substrate support asthe capacitance of the electronic controller 340 is changed.

The electronic sensors 330 and 338 may be used to tune the respectivecircuits 328 and 336 in a closed loop. A set point for current orvoltage, depending on the type of sensor used, may be installed in eachsensor, and the sensor may be provided with control software thatdetermines an adjustment to each respective electronic controller 334and 340 to minimize deviation from the set point. In this way, a plasmashape can be selected and dynamically controlled during processing. Itshould be noted that, while the foregoing discussion is based onelectronic controllers 334 and 340 that are variable capacitors, anyelectronic component with adjustable characteristic may be used toprovide tuning circuits 328 and 336 with adjustable impedance.

FIG. 4 is a schematic cross-sectional view of another inventiveapparatus 400 that may be used to practice processes described herein.The processing chamber 400 of FIG. 4 is similar in many respects to theprocessing chamber 300 of FIG. 3, and identical elements are numberedthe same in the two figures. The processing chamber 400 features adifferent tuning circuit 402 coupled to the substrate support 304. Thetuning circuit 402 has the same components as the tuning circuit 328,namely the electronic controller 340, the electronic sensor 338, a firstinductor 404 in series with the electronic controller 340, and a secondinductor 406 in parallel with the electronic controller 340.

The tuning circuit 402 of FIG. 4 works in a manner similar to the tuningcircuit 336 of FIG. 3, with different impedance characteristics as thevariable component 340 is adjusted. The impedance of the tuning circuit402 will differ from that of the tuning circuit 336 in a way thatdepends on the inductances selected for the inductors 404 and 406. Thus,the characteristics of the tuning circuit applied to the substratesupport may be adjusted not only by selecting a variable capacitor witha capacitance range that results in an impedance range that is useful inconnection with the characteristics of the plasma, but also by selectinginductors to modify the impedance range available using the variablecapacitor. As with the tuning circuit 336, the variable capacitor 340adjusts the impedance of the path to ground through the substratesupport, changing the electric potential of the electrode 322 andchanging the shape of the plasma in the processing volume 320.

FIG. 5A is a schematic cross-sectional view of another inventiveapparatus 500 that may be used to practice processes described herein.The processing chamber 500 features a chamber body 502, a substratesupport 504 disposed inside the chamber body 502, and a lid assembly 506coupled to the chamber body 502 and enclosing the substrate support 504in a processing volume 520. Substrates are provided to the processingvolume 520 through an opening 526, which may be conventionally sealedfor processing using a door.

The lid assembly 506 comprises an electrode 508 disposed adjacent to thechamber body 502 and separating the chamber body 502 from othercomponents of the lid assembly 506. The electrode 508 may be an annular,or ring-like member, and may be a ring electrode. The electrode 508 maybe a continuous loop around a circumference of the processing chamber500 surrounding the processing volume 520, or may be discontinuous atselected locations if desired. A pair of isolators 510 and 512, each ofwhich may be a dielectric material such as a ceramic or metal oxide, forexample aluminum oxide and/or aluminum nitride, contacts the electrode508 and separates the electrode 508 electrically and thermally from aconductive gas distributor 514 and from the chamber body 502.

The isolator 510 may be an internal isolator that is exposed to theprocessing environment of the processing volume 520, while the isolator512 may be an external isolator that is not exposed to the processingenvironment of the processing volume 520. In such an embodiment, theinternal isolator may be a material that has higher heat tolerance orheat stability than the external isolator. The internal isolator maycomprise a plurality of components fitted together with interfaces thatmitigate thermal stresses in the internal isolator. For example, threeceramic rings may make up an internal isolator. If the internal isolatoris heat resistant, the external isolator may be a less heat resistantmaterial, such as plastic. If the isolator 510 is an internal isolatorprovided for stability in the processing environment, the isolator 510may be extended downward adjacent to the lower instance of the isolator512 to provide a barrier against the processing environment, if desired.Alternately, the lower instance of the isolator 512 may be replaced withan isolator of the same or similar material as the isolator 510.

In an embodiment where the conductive gas distributor 514 is aconductive face plate, the conductive face plate may be a flat,conductive, plate-like member having a substantially uniform thickness,and a surface of the conductive face plate may be substantially parallelto an upper surface of the substrate support 504. The conductive faceplate may be metal, such as aluminum or stainless steel and may becoated in some embodiments with a dielectric material such as aluminumoxide or aluminum nitride.

The conductive gas distributor 514, which may be a conductive faceplate, is in thermal contact, and may be in physical contact, with aheater 516. The heater 516 includes a heating element 576, which may beresistive element, such as an electrical conductor designed to radiateheat, or a conductive element, such as a conduit for a heating fluid.The conductive gas distributor 514 features openings 518 for admittingprocess gas into the processing volume 520. An edge portion 580 of theconductive gas distributor 514 is accessible along the side of theprocessing chamber 500 to allow coupling of the conductive gasdistributor 514 to a source of electric power 542, such as an RFgenerator. DC power, pulsed DC power, and pulsed RF power may also beused.

A zoned blocker plate comprising a first zoned plate 552 and a secondzoned plate 558 contacts the conductive gas distributor 514 and providesmultiple gas pathways through the lid assembly 506. While the embodimentshown in FIG. 5A is an example of one configuration of such a zonedblocker plate, other configurations of a zoned blocker plate, includingconfigurations having more than two zoned plates, are conceivable. Thefirst zoned plate 552 has one or more plenums 554 for circulatingprocess gases through a first pathway for distribution to the processingvolume 520 through openings 556 in the first zoned plate 552 that are influid communication with the openings 518 of the conductive gasdistributor 514. The second zoned plate 558 also has one or more plenums560 for circulating process gases through a second pathway fordistribution to the processing volume 520 through openings 578 in thesecond zoned plate that are in fluid communication with pass-throughopenings 562 of the first zoned plate 552 and the openings 518 of theconductive gas distributor 514.

A gas cap 564 is disposed in contact with the second zoned plate 558,and provides portals for flowing process gases separately to the plenums554 in the first zoned plate 552 and the plenums 560 in the second zonedplate 558, allowing the process gases to flow to the processing volume520 without contacting each other prior to arriving in the processingvolume 520. The gas cap 564 also features a portal 566 in fluidcommunication with a pass-through opening 568 in the second zoned plate558 and the first zoned plate 552, and with one of the openings 518, forpassing process gas directly into the processing volume 520 through athird gas pathway, if desired. The gas cap 564 also features a conduit570 for circulating a fluid through the gas cap 564. The fluid may be athermal control fluid, such as a cooling fluid. Water is an example of acooling fluid that may be used, but other fluids, liquid and solid, mayalso be used. The thermal control fluid is provided to the conduit 570through an inlet 572 and is withdrawn from the conduit 570 through anoutlet 574. The gas cap 564 is in thermal communication with the firstand second zoned plates 552 and 558, and with the conductive gasdistributor 514. The heater 516 and the thermally controlled gas cap 564together provide thermal control for the conductive gas distributor 514to allow temperature uniformity from edge to center and from substrateto substrate. Gases are evacuated from the processing volume 520 througha portal 578, which may be coupled to a vacuum source (not shown), whichmay be located at any convenient location along the chamber body, andwhich may be associated with a pumping plenum, if desired.

The electrode 508 may be coupled to a tuning circuit 528 that controls aground pathway of the processing chamber 500. The tuning circuit 528comprises an electronic sensor 530 and an electronic controller 534,which may be a variable capacitor. The tuning circuit 528 may be an LLCcircuit comprising one or more inductors 532. The electronic sensor 530may be a voltage or current sensor, and may be coupled to the electroniccontroller 534 to afford a degree of closed-loop control of plasmaconditions inside the processing volume 520.

A second electrode 522 may be coupled to the substrate support 504. Thesecond electrode 522 may be embedded within the substrate support 504 orcoupled to a surface of the substrate support 504. The second electrode522 may be a plate, a perforated plate, a mesh, a wire screen, or anyother distributed arrangement. The second electrode 522 may be a tuningelectrode, and may be coupled to a second tuning circuit 536 by aconduit 546, for example a cable having a selected resistance such as50Ω, disposed in a shaft 544 of the substrate support 504. The secondtuning circuit 536 may have a second electronic sensor 538 and a secondelectronic controller 540, which may be a second variable capacitor. Thesecond electronic sensor 538 may be a voltage or current sensor, and maybe coupled to the second electronic controller 540 to provide furthercontrol over plasma conditions in the processing volume 520.

A third electrode 524, which may be a bias electrode, may be coupled tothe substrate support 504. The third electrode may be coupled to a biasunit 599 comprising a second source of electric power 550 and a filter548, which may be an impedance matching circuit. The second source ofelectric power 550 may be DC power, pulsed DC power, RF power, pulsed RFpower, or a combination thereof.

The lid assembly 506 and substrate support 504 of FIG. 5A may be usedwith any processing chamber for plasma or thermal processing. Oneexample of a plasma processing chamber with which the lid assembly 506and substrate support 504 may be beneficially used is the PRODUCER®platform and chambers available from Applied Materials, Inc., located inSanta Clara, Calif. Chambers from other manufacturers may also be usedwith the components described above.

In operation, the processing chamber 500 affords real-time control oftemperature in the lid assembly 506 and of plasma conditions in theprocessing volume 520. A substrate is disposed on the substrate support504, and process gases are flowed through the lid assembly 506 accordingto any desired flow plan. A temperature set point may be established forthe conductive gas distributor, and may be controlled by operation ofthe heater 516 and by circulation of a cooling fluid through the conduit570. Electric power may be coupled to the conductive gas distributor 514to establish a plasma in the processing volume 520. Because thetemperature of the conductive gas distributor 514 is controlled, lesselectric power is dissipated through heating of the conductive gasdistributor 514 and other components of the lid assembly 506, and thetemperature of the conductive gas distributor 514 is stabilized fromcenter to edge and from substrate to substrate, beginning with the firstsubstrate processed in the processing chamber 500. The substrate may besubjected to an electrical bias using the third electrode 524, ifdesired.

Upon energizing a plasma in the processing volume 520, a potentialdifference is established between the plasma and the first electrode508. A potential difference is also established between the plasma andthe second electrode 522. The electronic controllers 534 and 540 maythen be used to adjust the flow properties of the ground pathsrepresented by the two tuning circuits 528 and 536. A set point may bedelivered to the first tuning circuit 528 and the second tuning circuit536 to provide independent control of the plasma density uniformity fromcenter to edge and deposition rate. In embodiments where the electroniccontrollers are both variable capacitors, the electronic sensors mayadjust the variable capacitors to maximize deposition rate and minimizethickness non-uniformity independently. A plasma processing chamber mayhave one of the first or the second electrodes, or both the first andthe second electrodes. Likewise, a plasma processing chamber may haveone of the first tuning circuit or the second tuning circuit, or boththe first and the second tuning circuits.

Each of the tuning circuits 528 and 536 has a variable impedance thatmay be adjusted using the respective electronic controllers 534 and 540.Where the electronic controllers 534 and 540 are variable capacitors,the capacitance range of each of the variable capacitors, and theinductances of the inductors 532A and 532B, are chosen to provide animpedance range, depending on the frequency and voltage characteristicsof the plasma, that has a minimum in the capacitance range of eachvariable capacitor. Thus, when the capacitance of the electroniccontroller 534 is at a minimum or maximum, impedance of the circuit 528is high, resulting in a plasma shape that has a minimum areal coverageover the substrate support. When the capacitance of the electroniccontroller 534 approaches a value that minimizes the impedance of thecircuit 528, the areal coverage of the plasma grows to a maximum,effectively covering the entire working area of the substrate support504. As the capacitance of the electronic controller 534 deviates fromthe minimum impedance setting, the plasma shape shrinks from the chamberwalls and areal coverage of the substrate support declines. Theelectronic controller 540 has a similar effect, increasing anddecreasing areal coverage of the plasma over the substrate support asthe capacitance of the electronic controller 540 is changed.

The electronic sensors 530 and 538 may be used to tune the respectivecircuits 528 and 536 in a closed loop. A set point for current orvoltage, depending on the type of sensor used, may be installed in eachsensor, and the sensor may be provided with control software thatdetermines an adjustment to each respective electronic controller 534and 540 to minimize deviation from the set point. In this way, a plasmashape can be selected and dynamically controlled during processing. Itshould be noted that, while the foregoing discussion is based onelectronic controllers 534 and 540 that are variable capacitors, anyelectronic component with adjustable characteristic may be used toprovide tuning circuits 528 and 536 with adjustable impedance.

The chamber 500 in FIG. 5A also has an optical metrology device 582disposed in the lid assembly 506. The optical metrology device 582 istypically housed in the second zoned plate 558 and seats in the firstzoned plate 552. A different number of plates may be used in the lidassembly 506, if desired. The optical metrology device 582 is typicallyhoused in the first plate beneath the gas cap 564, for ease of access.The optical metrology device 582 is in optical alignment with an opening586 through the first zoned plate 552. The opening 586 is in alignmentand optical registration with a gas flow opening 518 of the conductivegas distributor 514. Typically, openings of this type are providedthrough all plates between the optical metrology device 582 and theconductive gas distributor 514. The openings 518 of the conductive gasdistributor 514 are sized for gas flow uniformity. The optical metrologydevice 582 produces a light beam that is sized to travel through one ofthe openings 518 without resizing the opening 518. Light emitted fromthe optical metrology device 582 travels through the openings 584, 586,and 518 toward the substrate support 504. The light reflects from asubstrate disposed on the substrate support 504 and travels back throughthe openings 518, 586, and 584 to the optical metrology device 582.Further details of the optical metrology device 582 are described belowin connection with FIGS. 9A-10C. A recess in the gas cap 564accommodates an upper portion of the optical metrology device 582 thatprotrudes above the second zoned plate 558.

FIG. 5B is a schematic cross-sectional view of a processing chamber 590according to another embodiment. The processing chamber 590 of FIG. 5Bis similar in many respects to the processing chamber 500 of FIG. 5A,and identical elements are numbered the same in the two figures. Theprocessing chamber 590 features a different tuning circuit 592 coupledto the substrate support 504. The tuning circuit 592 has the samecomponents as the tuning circuit 528, namely the electronic controller540, the electronic sensor 538, a first inductor 594 in series with theelectronic controller 540, and a second inductor 596 in parallel withthe electronic controller 540.

The tuning circuit 592 operates in a manner similar to the tuningcircuit 536 of FIG. 5A. The tuning circuit 592 has a variable impedance,with a range set by the properties of the electronic components of thecircuit, the electrode 522, and the plasma. At least one of theelectronic components of the tuning circuit 592 is variable to provide avariable impedance that may be controlled. Varying the impedance of thetuning circuit 592 controls the density profile of the plasma in theprocessing volume 520.

FIG. 6 is a schematic cross-sectional view of an apparatus 600 accordingto another embodiment. The apparatus 600 is a tandem unit of two processchambers 602A and 602B. Each of the process chambers 602A and 602B maybe any of the chambers 300, 400, 500, and 590. Typically the chambers602A and 602B are substantially identical, but they need not be. In FIG.6, the process chambers 602A and 602B are identical, and are eachsimilar to the chamber 590 of FIG. 5B. Each of the chambers 602A and602B has a respective exit portal 650A and 650B disposed around theirrespective substrate support shafts 544A and 544B. The chambers 602A and602B are evacuated through a common vacuum line 652 coupled to a commonvacuum source 630. The apparatus 600 comprises a gas delivery system 604that delivers process gases to respective gas manifolds 606A and 606B onthe lids of the chambers 602A and 602B. The gas delivery system 604comprises at least one gas source 608 coupled by a common flow controldevice 612 to the gas manifolds 606A and 606B by a common deliveryconduit 610. The gas delivery system also comprises at least one gassource 614 coupled by individual flow control devices 616A and 616B tothe gas manifolds through an individual delivery conduit 618. Separationof gas flows into commonly controlled flow and individually controlledflows allows for closer control of process gas flows to each chamber, ifdesired, while maintaining common flow control of ambient gases to eachchamber.

A controller 620 is coupled to the various control features of theapparatus 600, including the individual control devices 614, the commoncontrol device 612, the heater 516 of each chamber, the electronicsensors 530 and 538 of the tuning circuits that control the impedance ofthe respective tuning circuits, the optical metrology devices 582 ofeach chamber, and the bias generation circuits 599 for each chamber. Thecontroller 620 monitors progression of the deposition using the opticalmetrology devices 582 and adjusts gas flows, plasma density profiles,and temperature of each of the conductive gas distributors to achieve adesired uniformity for each deposition.

FIG. 7 is a schematic top view of an apparatus 700 according to anotherembodiment. The apparatus 700 is a collection of processing chambers,all of which may be embodiments of the processing chamber 500 of FIG.5A, coupled to a transfer chamber 708 and a load-lock assembly 704. Theprocessing chambers 590 of FIG. 5B, 300 of FIG. 3, and 400 of FIG. 4 mayalso be used. The processing chambers 500 are generally grouped intandem units 702, such as the tandem unit 600 of FIG. 6, each of whichhas a single supply of process gases 712. As noted in the descriptionaccompanying FIG. 6, flow of process gases may be commonly controlled tothe two chambers of the tandem unit 600 in the apparatus 700, and/orindividually controlled to each chamber of the tandem unit 600. Thetandem units 702 are positioned around the transfer chamber 708, whichtypically has a robot 710 for manipulating substrates. The load-lockassembly 704 may feature two load-lock chambers 706, also in a tandemarrangement. The apparatus 700 is generally suited to practicing methodsdescribed herein in a production environment with high throughput. Itshould be noted that any of the chamber embodiments described herein,the apparatus 300, 400, 500, or 590, may be used in the apparatus 700 inany combination.

FIG. 8A is a schematic section view of a substrate support 802 with amulti-zone heater that may be used with the other apparatus and methodsdisclosed herein to control a temperature profile of a substratedisposed on the substrate support 802. The substrate support 802 has anembedded thermocouple 804. An embodiment of the substrate support 802may be made using a hot press sintering process in which AlN in powderform may be pressed into a mold and heated. In an exemplary embodiment,the substrate support 802 may be formed by layering AlN powder into themold to form a first layer of AlN, positioning a first heating element814, which may be a resistive heating element, over the first layer ofAlN, depositing a second layer of AlN power over the first heatingelement 814, positioning a second heating element 816 on the secondlayer of AlN powder, adding a third layer of AlN power over the secondheating element 816, positioning the thermocouple 804 on the third layerof AlN, and then depositing a fourth layer of AlN powder over thethermocouple 804. Note that this procedure forms the substrate support802 in an inverted position relative to that shown in FIG. 8A.

If the electrodes described above are to be included, the layeringprocess as described above may be extended to provide for a biaselectrode and a tuning electrode either before the heating elements 814and 816, and the thermocouple 804, or after. Once the layers of AlNpowder, the heating elements 814 and 816, the thermocouple 804, and anydesired electrodes are in place, high pressure and high temperature (asare known in the art) may be applied to the structure to includesintering. The result is the formation of a solid substrate support 802as shown in FIG. 8A. Note that the above example described steps forforming a two zone substrate support. In other embodiments, 3, 4, 5, and6 or more zone substrate supports may be made with appropriatecorresponding layering steps and additional heating elements andthermocouples.

In some embodiments, the thermocouple 804 may include a longitudinalpiece of a first material 806 and a longitudinal piece of a secondmaterial 808. The first material and the second material typically havea melting point high enough to avoid damage during the manufacturingprocess described above, a difference in Seebeck coefficients sufficientto generate a voltage signal corresponding to small temperaturevariations, and a coefficient of thermal expansion close to that of thesubstrate support material so that neither the thermocouple 804 nor thesubstrate support 802 is damaged by thermal stresses during temperaturecycles.

The first material 806 and the second material 808 may be shaped inbars, wires, strips, or any other practicable shape that can both extendradially from the center of the substrate support 802 to an outerheating zone of the substrate support 802 and also have sufficientsurface area at both ends to allow formation of reliable electricalconnections. At the junction end 810 of the longitudinal pieces 806 and808, the longitudinal pieces 806 and 808 may be welded together and/orotherwise connected using a conductive filler material.

In embodiments where the thermocouple junction 810 is formed by welding,a welding method should be chosen that allows the junction 810 to remainintact and tolerate heat applied during the sintering process. Forexample, tungsten inert gas (TIG) welding or similar techniques may beused to weld a piece of W5Re, W26Re or other conductive materials to theW5Re and W26Re longitudinal pieces 806 and 808 to form welded junctionsthat will not melt during sintering.

Thus, in some embodiments, a method of forming the thermocoupledjunction 810 is to sandwich a filler material between W5Re and W26Restrips that function as the longitudinal pieces 806 and 808. The fillermaterial may be a metal with resistivity not higher than either W5Re orW26Re and have a melting point above sintering temperatures. Examples ofsuitable filler materials for use with W5Re and W26Re strips used as thelongitudinal pieces 806 and 808 include W5Re, W26Re, tungsten (W),molybdenum (Mo), and similar materials. In some embodiments, the hotpress sintering process could be used to bond the filler material to theW5Re and W26Re longitudinal pieces 806 and 808.

An insulating material may be inserted in the space 812 between thelongitudinal pieces 806 and 808 or the AlN powder may be forced into thespace 812 between the pieces 806 and 808. If AlN is used to insulate thethermocouple pieces 806 and 808 from each other, a thickness of at least0.5 mm of AlN is usually sufficient. Additional thickness may be used.Note that although the longitudinal pieces 806 and 808 shown in FIG. 7are disposed one over the other, in other embodiment, the longitudinalpieces 806 and 808 may be spaced lateral to each other, and thus may bedisposed at the same vertical position within the substrate support 802.Such an arrangement may facilitate depositing insulating AlN powder intothe space 812 between the pieces 806 and 808 during manufacturing.

FIG. 8B is a schematic section view of a multi-zone substrate support800 having additional features. After sintering the substrate support802 of FIG. 8A, holes 818 and 820 are opened in the center of the lowersurface 824 of the substrate support 802. Holes 818 and 820 extend toexpose the longitudinal pieces 806 and 808. Any practicable method(e.g., drilling) of opening a hole in the substrate support 802 may beused. The holes 818 and 820 are made of sufficient diameter to allowconnectors (e.g., conductive wires) to be connected to the longitudinalpieces 806 and 808. In some embodiments, the same materials used for thelongitudinal pieces 806 and 808 may be used for the connectors,respectively. In some embodiments, the connectors are a differentmaterial than the longitudinal pieces 806 and 808. In such cases, themeasured temperature will be based on the temperature different betweenthe thermocuoupled junction 810 location and the connector connectionpoints in the center of the substrate support 802. For a dual-zonesupport, the connector connection points are proximate to a conventionalthermocouple 826 used to measure the temperature of the inner zone andwhich is disposed at the center of the substrate support 802. Assumingthe temperature of the connection points is the same as the temperatureof the inner zone, the temperature at the thermocouple junction 810location can be calculated.

In some embodiments, the connectors are brazed, welded, or soldered tothe longitudinal pieces 806 and 808. The brazing process may beperformed in an oxygen free environment to avoid oxidation of thematerials. In addition, a hole 824 may be opened to insert theconventional thermocoupled 826 into the substrate support 802 for theinner heating zone. Note that although not shown, additional holes forconnectors to the heating elements 814 and 816 may also be opened andthe connections to the elements 814 and 816 made.

The shaft 822 may next be attached to the center of the lower surface828 of the substrate support 802. In some embodiments, the shaft 822,which houses the connectors to the longitudinal pieces 806 and 808, aconnector to the conventional thermocouple 826, and connectors to theheating elements 814 and 816, may be attached to the substrate support802 before the various connectors are attached to the respectivethermocouples 826 and 804, and the heating elements 814 and 816.

FIG. 8C shows the multi-zone substrate support 800 of FIG. 8B disposedin a processing chamber, such as the processing chamber 502. Theconnectors from the thermocouples 826 and 804, and the heating elements814 and 816, are coupled to a controller 832 that may include aprocessor and appropriate circuitry adapted to both receive and recordsignals from the thermocouples 826 and 804, and apply current to theheating elements 814 and 816. The multi-zone support 800 of FIG. 8B maybe disposed in any of the chambers 300, 400, 500, and/or 590, and asmentioned above, may also include bias electrodes and tuning electrodes.

FIG. 9A is a schematic cross-sectional illustration through the centerof the optical metrology device 582 according to one embodiment. FIG. 9Bis a close-up cross-sectional view through the center of the opticalmetrology device 582 of FIG. 9A. As shown, the metrology device 582includes a collimator 912 that rests within an opening 940 in the secondzoned plate 558. In the embodiment of FIG. 9A, the metrology device 582extends into an optional seating plate 942, disposed between the firstzoned plate 552 and the second zoned plate 558. The seating plate 942may also be a zoned plate, or the seating plate 942 may merely pass gasflows between the first zoned plate 552 and the second zoned plate 558.The first zoned plate 552 has a window 902 disposed therein forpreventing flow of process gases into the collimator 912, which mightdamage optical elements inside the collimator 912. The window 902 may beany material capable of admitting light from the collimator 912 throughthe first zoned plate 552, such as sapphire, quartz, or glass of anyappropriate composition.

The opening 940 and the collimator 912 together define a first gap 934and a second gap 936. The first gap 934 surrounds a first portion 944 ofthe collimator 912, and the second gap 936 surrounds a second portion946 of the collimator 912. The first portion 944 of the collimator 912may have a cylindrical shape, while the second portion 946 may have abox shape. The first gap 934 may be larger than the second gap 936 toaccommodate a tilting or rotating motion of the collimator 912, asdescribed in more detail below.

The window 902 is held on a ledge 914 within the seating plate 942 by awindow holder 904. The window 902 is disposed at an angle relative tothe substrate during processing. During operation, a light, which istypically a broad spectrum light, such as light from a xenon lamp, isprovided from a light source (not shown) to the collimator 912 through afiber bundle (not shown). The light passes through the collimator 912,which contains optics that align the light with the openings 586 and 518and compress the light to a diameter substantially within the diameterof the openings 586 and 518. The light then passes through the window902, through an opening 950 formed in the seating plate 942, through theopening 586, and through the opening 518 formed through the conductivegas distributor 514, illuminating the substrate. The light is thenreflected back from the substrate through the openings 518, 586, and 950to the collimator 912. The window 902 is disposed at an angle to preventdirect reflection of outbound light from the collimator 912 back intothe collimator 912. Angling the window 902 is optional, so the angle maybe any angle between about 0° to about 25°, such as between about 1° andabout 10°, for example about 3°. Reflected light from the substrate ispassed from the collimator out through a fiber bundle (not shown) to aspectrometer or other spectral light analyzer (such as a photodiode, aphotodiode array, or a CCD array).

Using the above described structure, metrology may be performed duringsubstrate processing. Gas may be flowing through the openings 518 andthe substrate may be processed while the light from the collimator 912(and reflected from the substrate) passes through the openings 518. Theopenings 518 are sized for gas flow uniformity through the conductivegas distributor 514, and are thus typically similar in dimension toopenings 518 of the conductive gas distributor 514 that are not used forin situ metrology. In one embodiment, the opening 518 has a diameter of0.0028″.

Light enters the collimator 912 through a conduit 930 with a pluralityof optical fibers 932 forming an optical fiber bundle. The collimator912 features optics (not shown), such as lenses and mirrors, thatredirect light from the optical fiber bundle 932 to an opening 948 inthe collimator 912. The optics align the light emerging from thecollimator 912 through the opening 948 with the openings 950, 586, and518, and focus or shape the light to fit through the smallest dimensionof the openings 950, 586, and 518. The light is directed along a paththat is perpendicular to a plane formed by two diameters of thesubstrate, so that the light is substantially perpendicular to thesubstrate surface. The optics also shape the light such that lightreflected from the substrate surface also passes substantially throughthe openings 518, 586, and 950 into the collimator 912 for passage outthrough the fiber bundle 932 to the spectral light analyzer.

During processing, various chamber components, such as the first zonedplate 552, the second zoned plate 558, the conductive gas distributor514, and the optional seating plate 942, may experience thermalexpansion and contraction. Thus, the collimator 912 could be easilymisaligned with the openings 586 and 518 unless properly disposed withinthe chamber. To ensure proper alignment of the collimator 912 withrespect to the openings 586 and 518, the collimator 912 has a taperedextension 926 with a slanted sidewall 908, for example a frustroconicalextension, that engages a recess 922, which may be a tapered bore, witha correspondingly slanted wall 906 formed in the seating plate 942. Inan embodiment without the optional seating plate 942, the recess may beformed in the first zoned plate 552. The second zoned plate 558 may alsohave a slanted wall 910 to accommodate the extension 926. The walls 908,910 and tapered extension 926 may be angled at an angle “a” relative toa top surface 920 of the seating plate 942. The collimator 912 extendsinto the recess 922 of the seating plate 942 and thus, when the seatingplate 942 moves laterally due to thermal expansion/contraction, thecollimator 912 correspondingly moves and thus remains properly alignedwith the openings 586 and 518. The angle “a” may be any angle thatresults in effective transmission of a lateral force of thermalexpansion in the seating plate 942 to the extension 926 of thecollimator 912 without generating an axial force that unseats thecollimator 912 from the recess 922. Typically, the angle “a” is betweenabout 100° and about 145°, such as 120°.

The conductive gas distributor 514 and first zoned plate 552 aretypically exposed to higher temperatures than the second zoned plate. Ina typical operation, the conductive gas distributor 514 may heat totemperatures between about 300° C. and about 600° C., while the secondzoned plate 558 may see temperatures 50° C. to 100° C. less than theconductive gas distributor 514. In an embodiment where the first zonedplate 552 and the conductive gas distributor 514 are aluminum, thedifferential expansion between the first zoned plate 552 and theconductive gas distributor 514 may be 10 nm to 100 nm, and thedifferential expansion between the conductive gas distributor 514 andthe second zoned plate 558 may be 200 nm to 500 nm, resulting in aslight variation of alignment between the collimator 912 and the opening940.

The first opening 934 and the second opening 936 are sized such that thecollimator 912 may move laterally, as the seating plate 942 moves,without touching the second zoned plate 558. In a typical embodiment,the collimator 912 may move laterally by a distance up to about 0.03inches, for example about 0.02 inches, as thermal cycles cause expansionand contraction of the seating plate 942. The first and second gaps 934and 936 are typically sized to accommodate this motion without contactbetween the collimator 912 and the second zoned plate 558. The first gap934 may have a dimension of up to about 0.15 inches, such as betweenabout 0.04 inches and about 0.12 inches, for example about 0.10 inches.The second gap 936 may have a dimension that is in the same range as thefirst gap 934, up to about 0.15 inches, such as between about 0.04inches and about 0.12 inches. The second gap 936 may be smaller orlarger than the first gap 934. In the embodiment of FIGS. 9A and 9B, thesecond gap 936 is smaller than the first gap 934, having an exemplarydimension of about 0.08 inches.

The tapered extension 926 of the collimator 912 has an edge 952 thatregisters with the recess 922. The edge 952 is typically rounded orchamfered to reduce the opportunity for particle generation as thecollimator 912 moves with the recess 922. The rounded edges 952 providea slip surface between the collimator 912 and the walls 908 and 910 thatreduces particle formation due to frictional forces at the interfaces.The radius of curvature of the rounded edges is typically less than0.1″, such as between about 0.05″ and about 0.09″, for example about0.07″.

Arranged in this way, the optical metrology device 582 of FIGS. 9A and9B can perform an in-situ optical analysis of a substrate duringprocessing. Light from the collimator passes through the opening 518while process gases flow through the opening 518 into the chamber. Theopening 518 through which the process gases flow may be sized tooptimize uniformity of gas flow through the showerhead, with noconsideration given to a size needed for metrology, and the metrologydevice can be fitted to the resulting opening size so that gas flowuniformity is not disturbed.

FIGS. 10A and 10C are schematic isometric illustrations of the mechanismused to mount the collimator 912 to the second zoned plate 558. FIG. 10Bis a cross-sectional view of the collimator 912 through the mountingmechanism. As shown in FIG. 10A, four fasteners 1002, such as bolts,extend through the collimator 912 and are releasably secured to thesecond zoned plate 558. In one embodiment, the fasteners 1002 maycomprise bolts. Resilient members 1004, which may be springs, arecoupled between the head of each fastener 1002 and the collimator 912such that the collimator 912 can remain attached to the second zonedplate 558, yet move in a direction shown by arrows “A” when thermalexpansion causes the collimator 912 to move. The resilient members 1004force the collimator 912 to remain seated in the recess 922 within theseating plate 942, so that lateral movement of the seating plate 942under thermal stress causes lateral movement of the collimator 912. Aconduit 1006 houses a bundle 1008 of optical fibers, and is coupled tothe collimator 912 at a portal 1010. The optical fiber bundle 1008carries light from a light generator (not shown) to the collimator 912for projecting onto the substrate, and returns light reflected from thesubstrate through the collimator 912 to a light analyzer (not shown).

FIG. 3B shows a perspective cross-section of the collimator 912 drawnthrough the fastener 1002 on one side of the collimator 912. Thecross-section of FIG. 10B is parallel to the cross-section of FIGS. 9Aand 9B, but is viewed in perspective. The fasteners 1002 seat in thesecond zoned plate 558, and the resilient members 1004 contact thecollimator 912 at a ledge 1022 to provide an axial force on thecollimator 912, tending to keep the collimator seated. The fasteners1002 pass through openings 1024 in the collimator 912. A gap 1026between each fastener 1002 and its respective opening 1024 allows thecollimator 912 to move laterally with respect to the fastener 1002 andwith respect to the second zoned plate 558. The gap 1026 is sized toaccommodate the lateral movement without contact between the collimator912 and the fasteners 1002, and typically has a dimension up to about0.15 inches, such as between about 0.04 inches and about 0.12 inches,for example about 0.10 inches.

Ball bearings 1012 are provided, each ball bearing 1012 seated in asocket 1014 formed in the collimator 912 at a surface 1016 thatinterfaces with a receiving surface 1018 of the second zoned plate 558.Each ball bearing 1012 rotates within its respective socket 1014 toallow the collimator 912 to move laterally while minimizing frictionbetween the collimator and the second zoned plate 558. The sockets 1014have side walls with a tapered portion 1020 that tapers toward the ballbearing 1012, forming an angle “13” with the surface 1016 to retain theball bearing 1012 within the socket 1014 while allowing smooth rotationof the ball bearing. The angle “13” may be between about 40° and about80°, such as between about 50° and about 70°, for example about 60°.

During operation, the first zoned plate 552, the seating plate 942, theconductive gas distributor 514 and the second zoned plate 558 are allelectrically biased with RF power to substantially the same electricpotential. Thus, an RF strap 1022 is used to electrically connect thecollimator 912 to the second zoned plate 558 to ensure the collimator912 remains at a substantially identical electrical potential as thesecond zoned plate 558.

The in situ metrology embodiments described herein may be used todetermine layer thickness by refractive effects that depend on layerthickness. Light from the in situ metrology device illuminates thesubstrate, penetrating the layers and reflecting differentially from theinterfaces between the layers according to the Fresnel equations. Thereflected light produces an interference pattern with incident light andwith reflected light from other layers. The interference pattern isgoverned by the thickness and composition of the layers. As one layergrows, the interference pattern changes with the thickness of thegrowing layer in a predictable way, so that an end point may bedetected. The final interference pattern resolved during growth of thelayer becomes a signature pattern that is used during deposition ofsubsequent layers to observe the change in the pattern as the subsequentlayers are formed.

By utilizing a slanted interface between the collimator and a blockerplate, the collimator may remain substantially aligned with a gaspassage formed through a gas distributor even when the blocker platethermally expands/contracts. The collimator, by being disposed within ablocker plate and annular base plate, directs light, and receivesreflected light, through the gas passage, even when the gas passage isin use (i.e., processing/cleaning gases are flowing therethrough). Thus,the metrology may be performed without negatively impacting processuniformity. Providing a passage for metrology that does not provide forgas flow through the passage may lead to process non-uniformity, sincethe passage would be above a portion of the substrate, and the gas flowin the vicinity of the passage would be non-uniform due to the lack ofgas flow through the passage.

The embodiments described herein feature one in situ metrology device orconfiguration. It should be noted that some embodiments may featuremultiple in situ metrology devices to monitor film formation at aplurality of locations on the substrate surface in real time. FIG. 11 isa bottom view of the conductive gas distributor 514 of FIGS. 5A and 5Billustrating use of in-situ metrology. Three openings 1102 are encircledin the embodiment of FIG. 11 indicating openings used for in-situoptical metrology, in addition to gas flow. The analysis locations maybe distributed according to any desired pattern. In the embodiment ofFIG. 11, three in situ metrology devices are provided in a distributedarrangement. The three in situ metrology devices may be positioned alonga circle concentric with the substrate support, which is to say thethree devices may be positioned to monitor three locations that aresubstantially the same distance from the center of a substratepositioned on the substrate support. Alternately, the three in situmetrology devices may be positioned at different distances from thecenter. Multiple monitoring devices may be useful to monitor depositionuniformity, both of thickness and composition, at different locations ofthe substrate surface, and to achieve closed-loop control of depositionrate and uniformity while depositing one layer or a plurality of layersin one chamber.

The optical metrology device described above in connection with FIGS.9A-10C produces light that indicates the structure of layers on asubstrate. Light of a known incident spectrum is directed normal to thesubstrate and reflects from the substrate surface. Some of the lightpenetrates through layers formed on the substrate and reflects from thelayer interfaces, producing a reflected spectrum that is different fromthe incident spectrum. During deposition of a layer, the reflectedspectrum changes as the thickness of the deposited layer changes.Comparing the reflected spectrum to the incident spectrum and to priorreflected spectra for the same layer enables accurate determination ofthe thickness of the deposited layer. Such measurements may be taken atmultiple locations on the substrate to determine uniformity of layerthickness and enable corrective actions to control the uniformity. Suchmeasurements may also be used to detect when the layer thickness hasreached a target value so deposition can be discontinued.

Incident light reflecting from two surfaces of a layer that has athickness comparable to the wavelength of the light will exhibit a phaseshift relative to the incident light. That phase shift is related to thefilm thickness and produces a characteristic interference patternbetween the incident light and the reflected light. The reflected lightthus has a spectral intensity that depends on the thickness of thelayer. If the optical properties of a subjacent layer or material areknown, a single pulse or flash of light may be reflected from the toplayer, and comparison of the reflected light with the incident lightusing the Fresnel equations determines the thickness of the top layer.

If the optical properties of the subjacent layer are not known, multipleflashes or pulses of light may be used during deposition of the toplayer to determine how the reflectivity changes with thickness of thetop layer. Deposition rate and time may be used to compute layerthickness at the time of each light pulse. The reflectivity typicallychanges as a sinusoidal function of layer thickness. A curve may be fitto the reflectivity data to compute the reflectivity of the subjacentlayer. The same comparison may be performed at multiple wavelengths, ifa broad spectrum light source and spectral light analyzer are used, toincrease convergence around the optical properties of the subjacentlayer. The reflectivity of the subjacent layer may be expressed as afunction of the reflectivity of the top layer, and the opticalproperties of the subjacent layer may be computed using the Fresnelequations.

If the subjacent layer is patterned, light reflected from the subjacentlayer may have polarized components that contribute to the totalreflected intensity in a root-mean-square relationship. Each wavelengthof light reflected from the substrate will have a reflected intensityindependent of the other wavelengths, and each wavelength of reflectedlight will behave according to the optical properties of the top layerand the subjacent layer. Thus, spectral analysis of multiple reflectedwavelengths may be performed, using the computed top layer thickness andknown top layer optical properties to fit the polar components of thesubjacent layer reflectivity, and the optical properties of thesubjacent layer that give rise to those components.

Once the optical properties of the subjacent layer are determined, acomplete model of the substrate reflectivity may be constructed, and thethickness of a deposited layer may be known from a single pulse ofreflected light using the Fresnel equations. If multiple layers aredeposited, reflectivity of each layer may be computed from the knownoptical properties of the layer being deposited, and the known opticalproperties of the subjacent layer, using a single pulse of light.Alternately, the optical properties of the subjacent layer may bereconstructed by analyzing multiple pulses as the deposition proceeds,as described above.

If the optical properties of the subjacent layer are known, thickness ofthe top layer may be computed from a set of reflectivity data R(t,λ) byfitting a generalized sinusoid to the data, according to the followingequation:

${R\left( {t,\lambda} \right)} = {{{A(\lambda)}{\sin\left( {{2\pi\frac{t}{T(\lambda)}} + {\phi(\lambda)}} \right)}} + {B(\lambda)}}$Layer thickness may then be computed from the phase shift parameterϕ(λ), using the known relation between layer thickness and phase shiftd=ϕλ/4πn.Alternately, the period T(λ) may be used to compute deposition rateD _(r)=λ/2n(λ)T(λ).The phase and period of the reflectivity data depend on wavelength, somultiple wavelengths of data may be used to converge on thickness and/ordeposition rate.

The reflectivity of the layer being deposited may also be related to thereflectivity of the subjacent layer using a variation of the Fresnelequations, as follows:

${R_{j}\left( {\lambda,t} \right)} = \frac{{r_{j}\left( {1 - {r_{j}R_{j - 1}}} \right)} + {\left( {R_{j - 1} - r_{j}} \right)e^{{- i}\; 2\beta_{j}}}}{1 - {r_{j}R_{j - 1}} + {{r_{j}\left( {R_{j - 1} - r_{j}} \right)}e^{{- i}\; 2\beta_{j}}}}$where R_(j) is the reflectivity of layer “j”, R_(j-1) is thereflectivity of layer “j−1”, which is the subjacent layer, and the otherparameters are defined, as follows:

$r_{j} = \frac{1 - N_{j}}{1 + N_{j}}$${\beta_{j}(\lambda)} = \frac{2\pi\;{N_{j}(\lambda)}D_{R}t}{\lambda}$N_(j)(λ) = n_(j)(λ) = n_(j)(λ) − ik_(j)(λ)Relating the reflectivity of the top layer and the subjacent layer inthis way enables calculation of the subjacent layer optical propertiesfrom the observed top layer reflectivity, and the known opticalproperties and deposition rate of the top layer.

Following is a description of an exemplary implementation of thisgeneral approach using a computer based processing scheme.

1. Input Data:

Experimental reflectivity data R(λ,t) consists of L number ofwavelengths (λ) and M time points (t) representing the reflectivity ofthe L wavelengths from the substrate at the M time points. See, forexample, FIG. 14. In a computer memory, the reflectivity R is storedsequentially as a one-dimensional array, according to, for example, FIG.15.

2. Modeling of Data:

The experimental data is fitted by a model, described by the followingformulas derived from the Fresnel equations governing the reflective andrefractive properties of light, including polarization to account forthe polarizing effects of structures formed on the substrate:

$\begin{matrix}{{f\left( {\lambda,t} \right)} = {{w{{F_{1}^{s}\left( {\lambda,t} \right)}}^{2}} + {\left( {1 - w} \right){{F_{1}^{p}\left( {\lambda,t} \right)}}^{2}}}} & (1) \\{{F_{1}^{s}\left( {\lambda,t} \right)} = \frac{{r_{1}\left( {1 - {r_{1}F_{sub}^{s}}} \right)} + {\left( {F_{sub}^{s} - r_{1}} \right)e^{{- i}\; 2\beta_{1}}}}{1 - {r_{1}F_{sub}^{s}} + {{r_{1}\left( {F_{sub}^{s} - r_{1}} \right)}e^{{- i}\; 2\beta_{1}}}}} & (2) \\{{F_{1}^{p}\left( {\lambda,t} \right)} = \frac{{r_{1}\left( {1 - {r_{1}F_{sub}^{p}}} \right)} + {\left( {F_{sub}^{p} - r_{1}} \right)e^{{- i}\; 2\beta_{1}}}}{1 - {r_{1}F_{sub}^{p}} + {{r_{1}\left( {F_{sub}^{p} - r_{1}} \right)}e^{{- i}\; 2\beta_{1}}}}} & (3) \\{{\beta_{1}\left( {\lambda,t} \right)} = \frac{2{\pi\left( {n_{1} - {ik}_{1}} \right)}D_{R,1}t}{\lambda}} & (4) \\{{r_{1}(\lambda)} = \frac{\left( {1 - n_{1}} \right) + {ik}_{1}}{\left( {1 + n_{1}} \right) - {ik}_{1}}} & (5) \\{{F_{sub}^{s}(\lambda)} = {{A_{sub}^{s}(\lambda)}e^{i\;{\phi_{sub}^{s}{(\lambda)}}}}} & (6) \\{{F_{sub}^{p}(\lambda)} = {{A_{sub}^{p}(\lambda)}e^{i\;{\phi_{sub}^{p}{(\lambda)}}}}} & (7)\end{matrix}$where w is a single constant (not a function of λ or t), n₁ and k₁ arewavelength-dependent constants, for example, as shown in FIG. 16. Theseformulas utilize the approach wherein reflectivity of the top layer andthe subjacent layer are related, as described generally above.3. Fit Parameters:

In the above equations, D_(R,1) is a single variable (not a function ofλ or t), and A_(sub) ^(s)(λ), ϕ_(sub) ^(s)(λ), A_(sub) ^(p)(λ), ϕ_(sub)^(p)(λ) are wavelength-dependent variables, for example, as shown inFIG. 17. The above variables are fit parameters that may be adjusted tominimize the square of the difference between the experimental dataR(λ,t) and the model f(λ,t), given by the following difference equation:

$\begin{matrix}{\chi^{2} = {\sum\limits_{\lambda,t}^{L,M}\;{{{R\left( {\lambda,t} \right)} - {f\left( {\lambda,t} \right)}}}^{2}}} & (8)\end{matrix}$The total number of fit parameters (N) equals the number of wavelengths(L) multiplied by 4, plus 1 for D_(R,1), i.e.:N=(L×4)+1  (9)4. Minimization Algorithm:

The minimization of χ² utilizes an implementation of the iterativeLevenberg-Marquardt (LM) algorithm to find the solution to the set oflinear equations

$\begin{matrix}{{{\sum\limits_{k = 1}^{N}\;{A_{jk}\delta\; P_{k}}} = {B_{j}\left( {{{A \cdot \delta}\; P} = {B\mspace{14mu}{in}\mspace{14mu}{matrix}\mspace{14mu}{form}}} \right)}},} & (10)\end{matrix}$for the incremental values δP_(k), that are added to the currentapproximation P_(k) (k=1, 2, . . . , N) of the fit parameter to give thenext approximation. The elements A_(jk) and B_(j) are defined as:

$\begin{matrix}{A_{j,j} = {\sum\limits_{\lambda,t}^{L,M}\;{\frac{\partial{f\left( {\lambda,t} \right)}}{\partial P_{j}}\frac{\partial{f\left( {\lambda,t} \right)}}{\partial P_{j}}\left( {1 + \Lambda} \right)}}} & \left( {11a} \right) \\{A_{j,k} = {\sum\limits_{\lambda,t}^{L,M}\;{\frac{\partial{f\left( {\lambda,t} \right)}}{\partial P_{j}}\frac{\partial{f\left( {\lambda,t} \right)}}{\partial P_{k}}\left( {j \neq k} \right)}}} & \left( {11b} \right) \\{B_{j} = {\sum\limits_{\lambda,t}^{L,M}\;{\left( {{R\left( {\lambda,t} \right)} - {f\left( {\lambda,t} \right)}} \right)\frac{\partial{f\left( {\lambda,t} \right)}}{\partial P_{j}}}}} & (12)\end{matrix}$The partial derivative is approximated by the difference formula:

$\begin{matrix}{{\frac{\partial{f\left( {\lambda,t} \right)}}{\partial P_{j}} = \frac{{f\left( {\lambda,t,{P_{j} + h_{j}}} \right)} - {f\left( {\lambda,t,P_{j}} \right)}}{h_{j}}},} & (13)\end{matrix}$where h_(j) is a pre-defined incremental value for each fit parameterP_(j).The LM algorithm can then be outlined as follows:

-   -   a. Start with a set of initial guess values for the fit        parameters P    -   b. Calculate χ²(P)    -   c. Choose a starting value for Λ, for example Λ=0.001    -   d. Solve the linear equations (10) for δP, using Gauss-Jordan        elimination algorithm    -   e. Calculate χ²(P+δP)    -   f. If χ²(P+δP)≥χ²(P), increase Λ by a factor of 10 and go back        to step d.    -   g. If χ²(P+δP)<χ²(P), decrease Λ by a factor of 10, and update        the fit parameters (P=P+δP)    -   h. Repeat steps d to h until any one of the stop criteria is        met:        -   i. χ²<χ² _(min)        -   ii. Δχ²<Δχ² _(min)        -   iii. L>L_(max)        -   iv. L<L_(min)            5. Pseudo Code:

The following is a description of the above algorithm using a computercode-like language featuring generic function specifications found inmost high-level computer programming languages.

  TargetFunction(out A, out B, out χ²) {  Foreach p∈P, λ and t  {   ${Calc}\;\frac{\partial{f\left( {\lambda,t} \right)}}{\partial p}$  } χ² = 0  ForEach λ and t  {   dy = R(λ, t) − f(λ, t)   Foreach j∈P   {   ${wt} = \frac{\partial{f\left( {\lambda,t} \right)}}{\partial P_{j}}$   For(k = 0; k <= j; ++k)    {     ${A\left\lbrack {{j^{*}P} + k} \right\rbrack}+={{wt}*\frac{\partial{f\left( {\lambda,t} \right)}}{\partial P_{k}}}$   }     B[j] += dy*wt;   }    χ² += dy*dy*w;  } } TargetFunction(A, B,pχ²) Λ = 0.001 While (StopCriteria == false) {  Foreach pj∈P  {   A[i,i] *= (1.0 + Λ)  }  GaussJordan(A, B)  Foreach pj∈P  {   pj = pj + bj  } TargetFunction(A, B, nχ²)  If(nχ² < pχ²)  {   Λ = Λ/10  }  Else  {   Λ= Λ*10  } }6. Profiler Data:

A suitably configured computer programmed to perform the algorithmdescribed above is expected to exhibit the distribution of CPU time inTable 1 when fitting the model to an experimental data set with 58wavelengths.

TABLE 1 Profiler data for 58 wavelengths # Function % CPU time 1TargetFunction 90 2 GaussJordan 87. Multi-Step Execution:

The algorithm described above may be performed repeatedly using subsetsof data to efficiently converge upon an accurate fit of the model. Inone example, an experimental data may consist of L=60 wavelengths. Insuch an example, the algorithm may be invoked multiple times, each withdiffering number of fit parameters, as follows:

-   -   1. After a certain pre-defined time interval has passed (e.g.        M=100), the first run involves only a limited number of        wavelengths (e.g. L=15), so that the number of fit parameters        N=15×4+1=61, including D_(R,1).    -   2. The second step calculates the fit parameters A_(sub)        ^(s)(λ), ϕ_(sub) ^(s)(λ), A_(sub) ^(P)(λ), ϕ_(sub) ^(P)(λ) for        the remainder of the wavelengths not included in step 1.        However, D_(R,1) is fixed in this step, which means the fit        parameters can be solved for each wavelength independently. The        number of fit parameters N is 4, and the remainder 45 wavelength        sets can be computed in parallel.    -   3. For experimental data in subsequent time-steps up to another        pre-defined time interval (e.g. 100<M<200), there is only a        single fit parameter D_(R,2) (≠D_(R,1)), and the computation        proceeds one time-step at a time, solving for a new D_(R,2) each        time. This step also requires a new set of n₂(λ) and k₂(λ)        constants, and new computations for r₂(λ) and β₂(λ,t).    -   4. Step 3 can be repeated multiple number of times sequentially,        for new data in pre-defined blocks of time.        -   The foregoing steps are summarized in the flow diagram of            FIG. 12.    -   5. A second option of implementation runs the computation of        step 1 above for data in multiple time intervals (blocks)        simultaneously. However, it does not need to wait until all data        are collected; the computation can begin after a certain        pre-defined time interval has passed (e.g. M=100) within the        first time block, and the fit parameters are continuously        updated as new data arrive. Because of the change in n(λ) and        k(λ) constants across time blocks, data in time blocks 2 and        greater require a nested formulation of the model functions        f(λ,t), F^(s)(λ,t) and F^(p)(λ,t), fox example:

$\begin{matrix}{\mspace{79mu}{{F_{2}^{s}\left( {\lambda,t} \right)} = \frac{{r_{2}\left( {1 - {r_{2}F_{1}^{s}}} \right)} + {\left( {F_{1}^{s} - r_{2}} \right)e^{{- i}\; 2\beta_{2}}}}{1 - {r_{2}F_{1}^{s}} + {{r_{2}\left( {F_{1}^{s} - r_{2}} \right)}e^{{- i}\; 2\beta_{2}}}}}} & (14) \\{\mspace{79mu}{{F_{2}^{p}\left( {\lambda,t} \right)} = \frac{{r_{2}\left( {1 - {r_{2}F_{1}^{p}}} \right)} + {\left( {F_{1}^{p} - r_{2}} \right)e^{{- i}\; 2\beta_{2}}}}{1 - {r_{2}F_{1}^{p}} + {{r_{2}\left( {F_{1}^{p} - r_{2}} \right)}e^{{- i}\; 2\beta_{2}}}}}} & (15) \\{{f\left( {\lambda,t} \right)} = {{w\left( {{{F_{1}^{s}\left( {\lambda,t_{1}} \right)}}^{2} + {{F_{2}^{s}\left( {\lambda,t_{2}} \right)}}^{2} + \ldots} \right)} + {\left( {1 - w} \right){\left( {{{F_{1}^{p}\left( {\lambda,t_{1}} \right)}}^{2} + {{F_{2}^{p}\left( {\lambda,t_{2}} \right)}}^{2} + \ldots} \right).}}}} & (16)\end{matrix}$

-   -   -   The number of time blocks involved in this step may be            pre-determined, for example 3.

    -   6. After step 5 is completed, the calculation continues as in        steps 2 to 4 above.        -   This process is summarized in the flow diagram of FIG. 13.

An exemplary silicon oxide layer may be formed using any of theapparatus herein, as follows. A substrate is disposed on the substratesupport of a processing chamber having the features described herein. Aprecursor gas mixture is formed by flowing TEOS at 1,000 mgm through avaporizer and mixing with 5,000 sccm of helium and 6,000 sccm of N₂O.The gas mixture is flowed into the processing chamber. It should benoted that if a zoned showerhead is used, the TEOS may be flowed throughone zone while the N₂O is flowed through the other zone. The helium flowmay be split into two parts, a first part used to carry or dilute thevaporized TEOS into the first zone and a second part used to carry ordilute the N₂O into the second zone.

Pressure in the processing chamber is set to 4.0 Torr, spacing betweenthe face plate of the chamber and the substrate is set to 400 mils. Faceplate temperature is set to 200° C. Side wall tuning electrode currenttarget is set to 6 A and substrate support tuning electrode currenttarget is set to 1 A. Substrate temperature is set to 500° C. withoffset between the temperature zones of the substrate support set to 5°C., with the outer zone at a higher temperature than the inner zone.

Power is coupled into the precursor gas to form a plasma. High frequencyRF power at a frequency of 13.56 MHz is applied at 500 W of power, andlow frequency RF power at a frequency of 300 kHz is applied at 100 W ofpower. The conditions are continued for a desired time to deposit alayer having a desired thickness, typically from 200 Å to 2,000 Å. Thedeposited silicon oxide layer has a thickness with a standard deviationthat is no more than about 1%. Thus, the thickness uniformity of thedeposited layer is no worse than about 1%.

A silicon oxide layer may be formed using silane as a precursor byanother embodiment of the processes described herein using an apparatusdescribed herein. Silane is flowed at 100 sccm, with helium at 3,000sccm and N₂O at 6,000 sccm. Spacing is 300 mils, pressure is 3 Torr,high frequency power is at 400 W, low frequency power is at 100 W, faceplate temperature is at 200° C., substrate temperature is 500° C.,temperature zone offset is 5° C. (outer above inner), side wall tuningelectrode current target is 1 A, substrate support tuning electrodecurrent target is 3 A. A silicon oxide layer is formed with thicknessuniformity that is no worse than about 1%.

A silicon nitride layer may be formed by another embodiment of theprocesses described herein using an apparatus described herein. Silaneis flowed at 30 sccm, nitrogen gas at 3,000 sccm, ammonia gas at 6,000sccm, and argon at 1,000 sccm. Spacing is 700 mils, pressure is 3 Torr,high frequency power is at 600 W, low frequency power is at 200 W, faceplate temperature is at 200° C., substrate temperature is 500° C.,temperature zone offset is 5° C. (outer above inner), side wall tuningelectrode current target is 7 A, substrate support tuning electrodecurrent target is 1 A. A silicon nitride layer is formed with thicknessuniformity that is no worse than about 1%.

A silicon nitride layer may be formed by another embodiment of theprocesses described herein using an apparatus described herein. Silaneis flowed at 150 sccm, nitrogen gas at 6,000 sccm, and ammonia gas at1,000 sccm. Spacing is 700 mils, pressure is 4 Torr, high frequencypower is at 600 W, low frequency power is at 200 W, face platetemperature is at 200° C., substrate temperature is 500° C., temperaturezone offset is 5° C. (outer above inner), side wall tuning electrodecurrent target is 6 A, substrate support tuning electrode current targetis 1 A. A silicon nitride layer is formed with thickness uniformity thatis no worse than about 1%.

A doped amorphous silicon layer may be formed by another embodiment ofthe processes described herein using an apparatus described herein.Silane is flowed at 500 sccm, helium at 10,000 sccm, and a dopantprecursor such as TMB, borane, and/or phosphine, diluted to aconcentration of 95% in helium, is flowed at 500 sccm. Spacing is 300mils, pressure is 10 Torr, high frequency power is at 300 W, no lowfrequency power is applied, face plate temperature is at 175° C.,substrate temperature is 500° C., temperature zone offset is 0° C., sidewall tuning electrode current target is 6 A, substrate support tuningelectrode current target is 3 A. A doped amorphous silicon layer isformed with thickness uniformity that is no worse than about 1%.

Stacks of layers such as the layers described above may be madesequentially by adjusting chamber conditions from one recipe to thenext. Gas flows may be interrupted and the chamber purged betweenrecipes, if desired to create sharp interfaces. Alternately, chamberconditions may be ramped from one recipe to the next while deposition iscontinued to make graded interfaces.

The in-situ monitoring algorithm described above may be used to monitorthe thickness of each layer in a stack, for example an alternating stackof silicon oxide and silicon nitride, or an alternating layer ofpolysilicon and silicon oxide. In each case, as layers are deposited atthe beginning of the stack, the algorithms utilizing reflectivity of thesubjacent material are implemented so as to track changes in thesubjacent layer reflectivity as layers are deposited.

It has been found that layer stacks including polysilicon layers mayfollow a simplified approach, due to the highly absorbing nature ofpolysilicon at shorter wavelengths. When forming a stack of alternatingpolysilicon and silicon oxide layers, for example, the subjacent layerreflectivity at wavelengths below about 600 nm has an observable effectup to three layers below the surface, but not beyond. In such astructure, the reflectivity spectrum taken from a stack of 10alternating polysilicon/oxide layers is observed to overlay the spectrumtaken from the same stack after the fourth pair of layers at wavelengthsbelow about 600 nm. This same behavior is independent of the first layer(i.e. whether the first layer is polysilicon or oxide). Thus, oneefficient approach includes fitting reflectivity data to a time-seriesmodel during deposition of the first three pairs of layers (the firstsix layers), after which the subjacent layer reflectivity may be assumedto be time-invariant at shorter wavelengths, and a wavelength series fitprocedure may be used.

The invention claimed is:
 1. A lid for a semiconductor processingapparatus, the lid comprising: a gas distributor having a plurality ofgas flow openings formed therethrough; a metrology device that directsand receives light through one of the gas flow openings, wherein themetrology device comprises a collimator with a fiber optic light source;a first plate coupled to the gas distributor, wherein the collimator isdisposed through an opening in the first plate, and the opening providesa gap that allows lateral motion of the collimator; and a seating platebetween the first plate and the gas distributor, the seating platecomprising a recess aligned with the gas flow opening, wherein thecollimator is seated in the recess.
 2. The lid of claim 1, furthercomprising a plurality of fasteners that couple the collimator to thefirst plate, each fastener comprising a resilient member.
 3. The lid ofclaim 1, further comprising a gas distributor heater capable of heatinga periphery of the gas distributor.
 4. A lid for a semiconductorprocessing apparatus, the lid comprising: a gas distributor having aplurality of gas flow openings formed therethrough; a metrology devicethat directs and receives light through one of the gas flow openings; afirst zoned plate, wherein the metrology device comprises a fiber opticand a collimator that houses the fiber optic, and the collimator isdisposed through an opening in the first zoned plate; and a seatingplate between the first zoned plate and the gas distributor, wherein anextension of the collimator is seated in the seating plate.
 5. The lidof claim 4, further comprising a second zoned plate between the seatingplate and the gas distributor, wherein the second zoned plate has aplurality of openings, and each opening of the second zoned plate isaligned with a gas flow opening of the gas distributor.
 6. The lid ofclaim 4, wherein the extension of the collimator is seated in a recessformed in the seating plate, and the recess has a slanted wall.
 7. A lidfor a semiconductor processing apparatus, the lid comprising: a gasdistributor having a plurality of gas flow openings formed therethrough;a metrology device that directs and receives light through one of thegas flow openings; and a zoned plate having a gas flow opening alignedwith a gas flow opening of the gas distributor, wherein the metrologydevice directs and receives light through the gas flow openings of thezoned plate and the gas distributor.
 8. The lid of claim 7, furthercomprising a second zoned plate, wherein the metrology device includes acollimator that fits an opening in the second zoned plate.
 9. The lid ofclaim 8, wherein the collimator does not contact the second zoned platewhen disposed in the opening of the second zoned plate.
 10. A lid for asemiconductor processing apparatus, the lid comprising: a gasdistributor having a plurality of gas flow openings formed therethrough;a metrology device that directs and receives light through one of thegas flow openings; and a first zoned plate and a second zoned plate,wherein: an opening is formed in the second zoned plate, the metrologydevice comprises a fiber optic and a collimator housing the fiber optic,and the collimator fits the opening in the second zoned plate.
 11. A lidassembly for a semiconductor processing apparatus, the lid assemblycomprising: a conductive gas distributor having a plurality of gasdistributor openings; a first zoned plate comprising: one or more firstplenums; and a first plurality of openings, wherein the first pluralityof openings are in fluid communication with a first subset of the gasdistributor openings; and a metrology device seated in the first zonedplate and in optical alignment with one of the first plurality ofopenings.
 12. The lid assembly of claim 11, further comprising a secondzoned plate comprising: one or more second plenums; and a secondplurality of openings, wherein the second plurality of openings are influid communication with a second subset of the gas distributoropenings, and the first subset is distinct from the second subset. 13.The lid assembly of claim 12, further comprising a gas cap havingportals, wherein: the gas cap is in contact with the second zoned plate,a first plurality of the portals are in fluid contact with the one ormore first plenums, and a second plurality of the portals are in fluidcontact with the one or more second plenums.